Temperature dependence of optical constants for amorphous silicon

The temperature dependence of the optical constants for amorphous silicon (a‐Si) is studied for two different sample thicknesses at two infrared wavelengths. It is observed that the extinction coefficient of a‐Si can increase significantly with temperature in the strong absorption regime. In addition, using the Mott–Davis formula, results are obtained for the variation of the optical gap energy for a‐Si with temperature, with similar feature observed for both amorphous and crystal silicon.