High Performance Schottky Diode and FET on InP

A high performance Schottky diode has been realized on InP by a special surface treatment. The diode reaches a breakdown voltage of 60 V and the reverse current remains at 0.6 ?A for 30 V reverse voltage. The best device shows a reverse current of 0.2 nA at 1 V voltage with an ideality factor of 1.54. The Schottky has been used as a gate in the fabrication of FETs on InP by ion implantation and CBE. A transconductance of 140 mS/mn has been obtained on a 3 ?m gate length FET in the frist experimental trial without any optimisaton.