Experimental investigations of SiGe channels for enhancing the SGOI tunnel FETs performance

We report the fabrication and the characterization of Tunnel FETs fabricated on SiGe-On-Insulator with a High K Metal Gate (HKMG) CMOS process. The beneficial impact of low band gap SiGe channel on I D (V G ) characteristics is presented and analyzed: compressive Si 0.75 Ge 0.25 enables to increase by a factor of 20 the saturation currents, even at small gate length (L G =50nm). This large gain is due to the threshold voltage shift and to enhanced intrinsic band-to-band tunneling injection (both related to the narrow band gap of SiGe channels).