Estimation of Oxide Breakdown Voltage During a CDM Event Using Very Fast Transmission Line Pulse and Transmission Line Pulse Measurements

Using TLP (Transmission Line Pulse) and VF-TLP (Very Fast Transmission Line Pulse) to emulate a fast transient stress, a study of oxide reliability during a CDM (Charged Devise Model) event was done to establish an empirical law between the time to breakdown and the voltage applied to the gate. A wide array of transistors in different configurations was tested to reflect real situation during a CDM event.