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Deep-level defects in epitaxial 4H-SiC irradiated with low-energy electrons
Deep-level defects in epitaxial 4H-SiC irradiated with low-energy electrons
2010
P. Kaminski
M. Kozubal
J.D. Caldwell
K. K. Kew
B. L. Van Mil
R. L. Myers-Ward
C. R. Eddy
D. K. Gaskill
Keywords:
Atomic physics
Epitaxy
Crystallographic defect
Penning trap
Irradiation
Electron
Materials science
low energy
Optoelectronics
deep level
Correction
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