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01aA12 GaAs初期基板上半絶縁性GaN成長に向けたFeドーピングメカニズムの解明(半導体バルク(3),第36回結晶成長国内会議)
01aA12 GaAs初期基板上半絶縁性GaN成長に向けたFeドーピングメカニズムの解明(半導体バルク(3),第36回結晶成長国内会議)
2006
rie togasi
fumitaka satou
takasi murakami
junzi iihara
kouzi yamaguti
yosinao kumagaya
mei haku kouketu
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Materials science
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