Thin-film transistor, manufacturing method thereof, and array substrate

The invention provides a thin-film transistor, a manufacturing method thereof, and an array substrate, and belongs to the technical field of thin-film transistors. According to the technical scheme of the invention, the problem in the prior art that existing thin-film transistors are poor in performance is solved. The manufacturing method of the thin-film transistor comprises the steps of forming a gate by graphene, forming a gate insulator layer by oxidized graphene, forming an active region by doped oxidized graphene or doped graphene, and forming a source electrode and a drain electrode by graphene. The graphene for forming the gate, the source electrode and the drain electrode is obtained through reducing the oxidized graphene. The graphene for forming the doped oxidized graphene or the doped graphene of the active region is obtained through processing the oxidized graphene.