Fiber Field‐Effect Device Via In Situ Channel Crystallization

The fabrication of metal-insulator-semiconductor fiber structures has been limited to the use of amorphous semiconductors, which exhibit inferior electronic transport properties compared to their crystalline counterparts. Here, for the first time, we demonstrate that the competing requirements for thermal drawing and subsequent phase-change in amorphous semiconductors can be reconciled to incorporate crystalline semiconductors into multimaterial fibers. Using this technique, we present the first arbitrarily long single-fiber field-effect device.