Enhanced Schottky barrier heights on n-type Ga0.47In0.53As by Be implantation
1987
Ion implantation of Be with extremely low energies of 2?5 keV into n-type GalnAs was performed, leading to shallow, fully depleted p-layers. This allowed us to achieve barrier heights of up to 0?6 eV, leading to well behaved diode characteristics.
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