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Characterization of deep-level defects in indium-gallium-arsenic-nitride
Characterization of deep-level defects in indium-gallium-arsenic-nitride
2002
Robert James Kaplar
Keywords:
Nitrogen
Valence band
Deep-level transient spectroscopy
Gallium
Annealing (metallurgy)
Indium
Nitride
Inorganic chemistry
Arsenic
Chemistry
Correction
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