Impact of Quantum Confinement on Stress-Induced nMOSFET Threshold Voltage Shift
2012
In this paper, we propose a comprehensive model to express nMOSFET threshold voltage shift induced by stress, ranging from a high tensile one to a high compressive one. Using this model, the quantum confinement effect, combined with large out-of-plane stress, is shown to play an important role to cause the threshold voltage shift as large as about 80 mV induced by high-film-stress contact etch-stop layer.
Keywords:
- Correction
- Source
- Cite
- Save
- Machine Reading By IdeaReader
19
References
0
Citations
NaN
KQI