Method for decreasing discreteness of resistance value of resistance change memory

The invention relates to a method for decreasing the discreteness of the resistance value of a resistance change memory. The method comprises the following steps of: (1) applying a current pulse in a forming process to convert a resistance change material of the resistance change memory from an initial state to a low resistance state; (2) applying a current pulse in a set process to convert the resistance change material of the resistance change memory from a high resistance state to the low resistance state; and (3) applying a reverse voltage pulse in a reset process to convert the resistance change material of the resistance change memory from the low resistance state to the high resistance state. The current/voltage control method provided by the invention can obviously decrease the discreteness of the resistance value of a component and can also enhance the resistance value of the low resistance state, thereby decreasing the working current of the component and lowering the power consumption.