In the reverse direction blocking semiconductor device and process for its preparation

Backward semiconductor device blocking comprising: - a drift layer (34) of a first conductivity type; - a MOS gate structure with - a base layer (24) of a second conductivity type selectively formed in the front side of the drift layer (34) is formed, - is formed of an emitter region (32) of the first conductivity type selectively in a surface region of the base layer (24), - a control electrode insulating film that covers a surface area of ​​the base layer (24) between the emitter region (32) and the drift layer (34), and - a control electrode (7) formed on the control electrode insulating film; - an emitter electrode (28) in contact with both the emitter region (32) and the base layer (24); - a Trennisolierregion (31) of the second conductivity type surrounding said MOS gate structure over the drift layer (34) and extends over the entire thickness of the drift layer; - a collector layer (29) of the second conductivity type, which is at the back of the drift layer (34) formed and connection to the rear of the Trennisolierregion ...