Improvement of polarization of the nitride light emitting diode according to an off-axis cut wafer

The present invention provides a technique for obtaining high polarization ratios from nonpolar LED. LED is grown on the m-plane GaN wafer having an off-axis cut, they tend to hold the light emission characteristics with high polarization ratios. Wafer off-axis cut (known as "off-cut") is carried out facing the polarity (-c) orientation. Polar (-c) non-polar III off-axis cut nitride wafers facing orientation, resulting in high emission polarization ratio than the wafer without such an off-axis cut. 5 ° angle of off-axis cut has been observed to provide the highest polarization ratio (0.9) among any other validated angle off-axis cut 0 ° to 27 °.