Low threshold current density 1.3 /spl mu/m InAs/InGaAs quantum dot lasers with InGaP cladding layers grown by gas-source molecular-beam epitaxy

InAs/InGaAs quantum dot lasers with InGaP cladding layers grown by gas-source molecular-beam epitaxy are reported. The laser emits 1.296 µm light output and demonstrates a very low threshold current density of 111 A/cm2. This is the lowest reported value of GaAs-based 1.3 µm quantum dot lasers with InGaP cladding layers.