LED and manufacturing processes for such

There are provided an LED (light emitting diode) and a manufacturing method for such. On the surface of a substrate (100), a GaN thick film (110) is formed with an inclined surface. This oblique surface is formed in a natural way by using the properties of the GaN epitaxy. On the GaN thick film has a LED structure (130, 140) is grown to prepare a LED device. Due to the natural production of the slant surface, the manufacturing process is simplified. Taking advantage of the Expitaxieeigenschaften in growing a GaN thick film different types of LED chips with a plurality of inclined surfaces, and various structures can be produced. Since the light emitting surface of the chip is increased and the plurality of inclined surfaces reduce the likelihood of total internal reflection, the light emission efficiency is much better than in the prior art.