Radiation Effects Characterization of a High Density SSRAM

Craig Hafer,Jonathan Mabra,C. Mnich,M Leslie,A. Jordan

Radiation Effects Characterization of a High Density SSRAM

2014

Craig Hafer
Jonathan Mabra
C. Mnich
M Leslie
A. Jordan

A high density 64/80/96-Mbit SSRAM has been designed, manufactured, and characterized for radiation effects. The device is SEL immune, has an error rate less than 1x10-15 errors/bit•day, and is TID tolerant to 100 krad(Si).

Keywords:

Electronic engineering
Radiation
Engineering
Word error rate
Electrical engineering

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