High fluence proton irradiation of GaAs detectors at room temperature and at −8°C

Semi-insulating GaAs detectors processed in Aachen using Freiberger Compound Material with low carbon content (FCM-LC) have been irradiated with protons (23 GeV) at eleven different fluences up to 6.3 × 10 14 p/cm 2 at room temperature. The detectors have been characterized in terms of macroscopic quantities like I–V characteristic curves and the signal response for incident minimum ionizing particles before and after irradiation. At the temperature of −8°C three other GaAs detectors have been irradiated with protons at fluences of about 6 × 10 13 p/cm 2 . After the irradiation they are warmed up at room temperature. The behaviour of the detectors before and after the warming up period has been studied.