A semiconductor device structures and methods of forming semiconductor structures

A process for patterning a semiconductor film, comprising: Forming a hard mask material on a semiconductor film having a global crystal orientation, wherein the semiconductor film has a first crystal plane and a second crystal plane, wherein said first crystal plane is more dense than the second crystal plane, and wherein the hard mask is formed on the second crystal plane, Forming a pattern of covered with a hard mask semiconductor structure from the semiconductor film and the hard mask material, and Subjecting a wet etch process, the chemical effectiveness sufficient to etch the second crystal plane, but not to of sufficient chemical strength to etch the first crystal plane on the area covered with the hard mask semiconductor structure.