Semiconductor device and method for producing these

In a method of manufacturing a semiconductor device, a dielectric layer is formed over a substrate. A first structure and a second structure formed in the first interlayer dielectric. The first structure has a width that is greater than a width of the second structure. A first metal layer is formed in the first structure and the second structure. A second metal layer is formed in the first structure. A planarization process is performed on the first and the second metal layer, so that a first metal wiring are formed by the first structure and a second metal wiring by the second structure. A metal material of the first metal layer is different from a metal material of the second metal layer. The first metal wiring comprising the first and the second metal layer and the second metal wiring includes the first metal layer, but does not include the second metal layer.