Experimental investigation on selenium ion-implanted gallium oxide

Material characterizations were carried out to investigate the optical properties and surface morphology of Ga2O3:Se wafer obtained through ion implantation. Se concentration in Ga2O3 varies by adjusting the implant dosage up to 1⨉10^16 ions/cm2. The scanning electron microscopy (SEM) and atomic force microscope (AFM) were conducted to reveal the surface morphology, which shows the surface quality of the samples is likely to be improved with Se-implantation. Optical absorption measurement was also carried out to determine the effect of Se on the properties of Ga2O3. The results indicate the potential use of Ga2O3:Se in ultraviolet photodetector or electronic device applications.