Oxidation of Single‐Crystal Silicon Carbide Part II . Kinetic Model

The oxidation of single-crystal SiC in dry oxygen (10 -3 -1 atm and 1200°-1500°C) followed parabolic kinetics. The oxygen partial pressure dependence of the oxidation rate of the (0001) carbon face decreased with increasing temperature. A kinetic model based on parallel transport of oxidants through the oxide via molecular and ionic oxygen diffusion mechanisms fits the observed oxidation behavior. Both diffusivity and activation energy values for oxidants permeating through the oxide derived from the model using the experimental date are similar to those for molecular oxygen permeating through vitreous SiO 2