Low-temperature processing ferroelectric strontium-bismuth tantalate layers and producing ferroelectric devices thereof

In a method for the preparation of ferroelectric strontium-bismuth tantalate with the compositions Sr¶x¶Bi¶y¶Ta¶2¶O¶9¶ (SBT) or Sr¶x¶Bi¶y¶ (Ta, Nb) ¶2 ¶O¶9¶ (SBTN), the element strontium, which is present normally in a proportion y = 2, provided with an excess in the range 2.1 y 3.0. This makes it possible to carry out the heat treatment step for converting the deposited material in the ferroelectric phase at a temperature below 700 DEG C T¶1¶. In addition, the strontium content x can be decreased from its nominal value of 1 to 0.7.