Interaction of copper with sulfur on the sulfur-terminated Si(111)-(7×7) surface

Abstract The adsorption of S 2 on the Si(1 1 1)-(7 × 7) surface and the interaction of copper and sulfur on this sulfur-terminated Si(1 1 1) surface have been studied using synchrotron irradiation photoemission spectroscopy and scanning tunneling microscopy. The adsorption of S 2 at room temperature results in the passivation of silicon dangling bonds of Si(1 1 1)-(7 × 7) surface. Excessive sulfur forms S n species on the surface. Copper atoms deposited at room temperature directly interact with S-adatoms through the formations of Cu–S bonds. Upon annealing the sample at 300 °C, CuS x nanocrystals were produced on the sulfur-terminated Si(1 1 1) surface.