Memory cell and method for manufacturing memory cell

Disclosed is a memory cell that includes a transistor (T1) and a variable resistance element (RC1), which are formed on a base material (10). The transistor (T1) includes: a gate electrode (20), a source electrode (50), and a drain electrode (60); a channel section (70), which includes carbon nano-tubes, and which is in contact with the source electrode (50) and the drain electrode (60); and an insulating section (40), which is disposed between the gate electrode (20) and the channel section (70). The variable resistance element (RC1) includes: a first electrode (30) and a second electrode, which are formed by being spaced apart from each other; a resistance section (80), which includes carbon nano-tubes, and which is in contact with the first electrode (30) and the second electrode. The first electrode (30) or the second electrode is shared as the source electrode (50) or the drain electrode (60).