Investigation of Novel GaN HEMT for the Application of MCS

An unintentionally doped AlGaN/AlN/GaN HEMT applied to microwave communication system(MCS)is investigated by solving Poisson equations in self-consistent solution and simulation of TCAD software.The influence of two-dimensional electron gas and transconductance on device structure parameter is obtained by calculation.Combining with results of theory analysis and simulation results,the optimization structure Al0.29Ga0.71N/AlN/GaN HEMT is proposed.The simulation results show that the device with gate length of 0.3 μm and gate width of 100 μm has the maximum transconductance of 418 mS/mm and the maximum current density of 2 300 mA/mm.