Numerical study of polarization-doped AlGaN ultraviolet light-emitting diodes

Abstract The AlGaN-based ultraviolet light-emitting diodes (UV LEDs) with specific design of polarization-induced p-type doping are investigated numerically. The proposed polarization-doped UV LEDs with different Al content graded AlGaN layers exhibit significant improvement for the light output power and carrier injection efficiency compared with the conventional AlGaN UV LED. The enhanced performance for polarization-doped UV LED is explained by the simulated energy band diagrams, distribution of carrier concentration and radiative recombination rate in the quantum wells.