Исследование гетероструктур InGaAs/GaAs c квантовыми ямами и точками методом комбинированной СТМ/АСМ на сколах в жидкости

The method of combined scanning tunneling and atomic-force microscopy (X-STM/AFM) in a protective liquid (oil) is used for the first time for studying quantum-well (QW) InGaAs/GaAs and quantum-dot (QD) InAs/GaAs heterostructures. The structures being studied were fixed vertically and cleaved in a Petri dish filled with diffusionpump oil protecting the cleavage from oxidation. The cleavage was contact-AFM scanned by a conducting AFM probe, and the probe-sample current was measured simultaneously. It is shown that (i) QWs (QDs) on cleavages can be imaged by the constant-force, constant-height, and lateral-force AFM, (ii) current images of heterolayers and the current-voltage characteristic of the contact between an AFM probe and the cleavage surface of an in-oil heterostructure based on an А3В5 semiconductor can be obtained, and (iii) regions with different composition on heterostructure cleavages can be identified.