Substrate heating effects in CO2 laser annealing of ion‐implanted silicon

A pulsed CO2 laser has been used for the annealing of doped ion‐implanted silicon crystals. Good recrystallization was achieved for a sample with a dopant density of 7×1015 cm−3, when preheated to 850 K. Damage caused by thermal runaway however made annealing of samples with a dopant concentration of this order difficult. The effect of the strong temperature dependence of the absorption coefficient at the CO2 laser photon energy is considered. Melting model calculations give agreement with the experimental observations.