Impact of back-gate biasing on ultra-thin silicon-on-insulator-based nanoribbon sensors

In this study, we demonstrated that electrolytes in contact with SOI-based back-gated sensors are complexely coupled to applied back gate biases. Because to this, the liquid voltage modulates the top channel and controls the operating point of the device. This dual gating behavior has strong implications on the performance of both nanoribbon and nanowire sensors.