Organic Field-Effect Transistor Integrated Circuits using Self-Alignment Process Technology

Organic field-effect transistor (OFET) integrated circuits have been investigated by applying a self-alignment process technology. In order to obtain a larger logic swing and shorter switching time, a level-shift inverter with a super-buffer configuration was adopted. The circuit parameters were optimized and then a seven-stage ring oscillator with a channel length of 9 µm was fabricated. The obtained propagation delay was 24 µs/stage, which will be improved to 2–3 µs/stage by miniaturizing the channel length and upgrading the carrier mobility.