Aging Mechanisms and Accelerated Lifetime Tests for SiC MOSFETs: An Overview

Accelerated lifetime tests play a critical role in long-term reliability studies of SiC MOSFETs, including lifetime estimation, failure analysis and condition monitoring. This paper presents a comprehensive review of state-of-the-art accelerated lifetime tests circuits, operating principles, and induced failure modes for SiC MOSFETs. Firstly, the weak spots and corresponding aging mechanisms in both device chip and package are summarized. Next, based on the system operating conditions, accelerated lifetime test configurations, and working principles are discussed. Specifically, SiC MOSFET accelerated lifetime tests under normal operation, third-quadrant conduction and extreme conditions are comprehensively described and compared. Requirements and future trends on accelerated lifetime tests selection and development are comprehensively discussed corresponding to various reliability research directions. Finally, suitable accelerated lifetime tests, corresponding failure locations and mechanisms are tabulated as conclusion. This review intends to provide insight on SiC MOSFET reliability test selection, platform development and test parameter adjustments depending on application requirements.