High-performance photodetector using urchin-like hollow spheres of vanadium pentoxide network device

Abstract This paper investigates the properties of the urchin-like hollow spheres of vanadium pentoxide (UHS V 2 O 5 ) network device. The device exhibited high photocurrent of μA with 10 2 rectification ratio under illumination due to the formation of a network device structure that reduced junction barrier and providing more electronic paths in our photodetector. The photovoltaic characteristics near zero bias were also observed when the device irradiated by 450 nm of 29.8 mW/cm 2 . The calculated open circuit voltage and short-circuit current were 0.26 V and 0.105 μA, respectively. The key performing parameters responsivity and specific detectivity of the fabricated device were (7.18-0.91) A/W and (5.94 × 10 11 -7.5 × 10 10 ) Jones, respectively under the bias voltage of −5 V and an illumination power from (3.3-29.8) mW/cm 2 . The high-performance is attributed to the high-quality well-distributed UHS V 2 O 5 network device that has more active sites and a large area of illumination that facilitate oxygen adsorption and desorption at the V 2 O 5 surface.