TCAD SIMULATION OF USING POCKET IMPLANT IN 50NM N-MOSFETS

In this paper, the effectiveness of pocket implant to suppress the short channel effect is studied using TCAD simulation for 50 nm physical gate length n-MOSFETs. Under different dosage, tilt, and energy conditions, we extensively analyzed the NMOS device characteristics, like Vt, Id, and DIBL. The simulation results will be a valuable reference for process engineers to tune pocket implant parameters.