Semiconductor device comprising tsv(through silicon via), and semiconductor package comprising the same

The present invention provides a semiconductor device where through silicon via (TSV) is effectively formed according to the reduction of a device while an insulation layer surrounding the TSV is formed in a sufficient thickness, method for manufacturing the semiconductor device and a semiconductor package including the semiconductor device. The semiconductor device comprises a substrate where a recess region is formed at a particular part of a rear side; a wiring part formed on the front side of the substrate and having at least one wiring layer; An insulation layer formed at the rear side of the substrate and having a first part filling the recess region and a second part covering the rear surface of the substrate other than the recess region; and multiple TSVs electrically connected to at least one wiring layer by penetrating the first part.