Performance Evaluation and Comparison of CNTFET-Based 7T SRAM with 6T SRAM

Excellent thermal conductivities, superior current capabilities and ballistic transport operation these prominent properties of carbon nanotube field-effect transistor technology make it superior or alternative approach over traditional CMOS and conventional FETs. A detailed simulation-based analysis of this technology with the evaluation of circuit performance of SRAM is presented here. Performance of CNTFET-based 6T SRAM and 7T SRAM is analyzed and compared in terms of static noise margin and static power dissipation. Variations of parameters for performance evaluation include fermi level, dielectric constant, oxide thickness, work function and chiral vector. The work has modelled in HSPICE software using Stanford CNTFET model for channel length of 32, 22, 16 and 7 nm. Evaluated results show that CNTFET-based 7T-SRAM has high static noise margins when compared with 6T-SRAM.