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GaAs and AlGaAs reactive ion etching in SiCl4/Ar gas mixtures for HEMT applications
GaAs and AlGaAs reactive ion etching in SiCl4/Ar gas mixtures for HEMT applications
2007
Alcinei Moura Nunes
Stanislav A. Moshkalev
Peter Jurgen Tatsch
C. A. Duarte
G. M. Gusev
Keywords:
Reactive-ion etching
Analytical chemistry
Materials science
High-electron-mobility transistor
Computer science
Astrophysics
Optoelectronics
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