P‐20: An Efficient Method for Improving the Negative‐Bias‐Temperature‐Stress (NBTS) Stability of Amorphous In‐Ga‐Zn‐O TFT

An efficient method of preparing a α-IGZO TFT with better negative-bias-temperature-stress (NBTS) stability is presented. When the α -IGZO TFT is used as the switch of a pixel, it suffers a long time NBTS. The NBTS of α -IGZO TFT would cause the Vth shift toward negative value, and thus increase the leakage current which leads to the pixel voltage drop when pixel is holding. In this work, some post-IGZO plasma treatments methods are studied for the optimized NBTS stability process. with N2O plasma treatment being employed, the α -IGZO TFT shows excellent NBTS stability.