X-ray photoelectron spectroscopic depth profilometry of nitrogen implanted in materials for modification of their surface properties

Summary form only given, as follows. The modification of the surface properties of materials has a wide range of industrial applications. For example, we can change the electrical characteristics of semiconductors, improve surface hardness, decrease friction, increase resistance to corrosion, improve adhesion, etc. Nitriding is one of the most common processes used in industry for surface treatment. Nitrogen ion implantation is one technique often used to achieve this goal. Ion implantation offers the power to control the deposition profile, and can be achieved by either conventional ion beam implantation or plasma assisted ion implantation. We have used the technique of plasma assisted ion implantation to implant nitrogen in several materials, including titanium, silicon and stainless steel. The plasma source is a surface ECR source developed at INRS-Energie et Materiaux. The depth profile of the implanted ions has been measured by X-ray photoelectron spectroscopy. We have also conducted simulations using the TRIM-95 code to predict the depth profile of the implanted ions. Comparisons of the measured results with those from simulations are used to deduce information regarding the plasma composition and the collisional effects in the plasma. A fast responding, current and voltage measuring circuit with fiber optic links is being developed, which will allow more accurate quantitative measurements.