Research on controllable preparation and antireflection properties of zigzag SiNWs arrays

ABSTRACTIn this work, an alternative metal-assisted chemical etching method is proposed to fabricate large-area uniform zigzag silicon nanowires. The effects of deposition time, etching time, HF concentration and H2O2 concentration on the nanostructure of nanowires were systematically investigated. The results demonstrate the suitable preparation concentrations in the alternating etching process are HF([SI]/[SII] = 9.2 M/2.3 M) and H2O2{[SI]/[SII] = (0.04 M∼0.26 M)/(0.4 M∼0.65 M)}. Moreover, the anti-reflec-tion properties of the resulting zigzag SiNWs arrays have been studied, the average reflectance is almost lower than 10% at wavelength range of 200∼1200 nm. The superior anti-reflection performance of zigzag SiNWs shows a huge potential application in high-efficiency silicon solar cells.