1.5 w 11-17 GHz GaAs MESFET power amplifier utilising lumped-element matching techniques

The development of GaAs MESFET wideband power amplifiers requires the use of small size components and novel device packaging technology. We recently fabricated amplifier modules capable of 24.5 dBm output covering the 8.0–17 GHz band. The circuit utilised the lumped-element format. The modules were than power combined into a 31.8 dBm power amplifier.