Modeling of Macroscopic Transport Parameters in Inversion Layers

We present a parameter extraction technique for higher-order transport models for a 2D electron gas in ultra thin body SOI MOSFETs. To describe 2D carrier transport we have developed a self consistent Schrodinger-Poisson Subband Monte Carlo simulator. The method takes into account quantization effects and a non equilibrium distribution function of the carrier gas, which allows an accurate description of the parameter behavior for high electric fields. Finally the results are compared with the transport parameters of 3D bulk electrons and the influence of the channel thickness on the mobility is investigated.