Comparative Performance Analysis of 6T SRAM cell in 180nm and 90nm Technologies

Memories are one of the most important component in semiconductor integrated circuits. In recent years, faster memories with more data stability and lower power consumption emerge in different technologies. Among the types of memories, SRAM is one of the fastest which is generally used as high speed registers and caches. The stability, power consumption and speed of SRAM are current trending research fields. This work consists of 6T SRAM Cell modelled in 180nm and 90nm CMOS Technology and compared the average power and delay in different temperatures across these technologies. The entire work is simulated in Cadence.