Synthesis of arsenic-doped p-type ZnO films by addition of As2O3 to the ZnO spin coating solution

Abstract Arsenic-doped ZnO films were prepared by adding As 2 O 3 to sol–gel ZnO spin coating synthesis. The preferential (002) orientation improved, and the grain size of ZnO lattice increased with As-doping in ZnO films. UV transmittance over 70% with a blue shift was observed after As-doping. In particular, ZnO film with an As concentration of 6.7 at% showed a carrier concentration of 1.62×10 19 /cm 3 , mobility of 94.0 cm 2 /Vs, and resistivity of 3.99×10 −3  Ω cm. It was suggested that formation of As–2V Zn increased the carrier concentration and induced the blue shift, and the increase in grain size increased the mobility of p-type ZnO films.