Strained quaternary GaInAsP quantum well lasee emitting at 1.5 μm grown by gas source molecular beam epitaxy

Abstract Quantum well structures and separate confinement heterostructure lasers based on strained quaternary Ga 1− x In x As 1− y P y well material were grown by gas source molecular beam epitaxy. The substitution of As for P allows a simultaneous control of wavelength, well width and strain in the structure. Single strained layers in InP show photoluminescence with narrow linewidth (4 to 8 meV). Broad area lasers with strained and unstrained layers have been grown with five quantum wells and identical optical confinement. The strained quaternary structure has a threshold current density of 760 A/cm 2 for L = 400 μm, an internal quantum efficiency of nearly 100%, a waveguide loss of 10 cm -1 and a high T 0 value ( T 0 = 91 K). Single-well structures have a lowest value of 240 A/cm 2 for 3 mm long devices.