Novel silicon nanostructures based on graphene ribbons

In this paper，we have studied formation processes of silicon nanostructures on edges of graphene ribbons by molecular dynamics simulation.We found that，Si atoms in a gas state can be absorbed on the edges of zigzag graphene ribbons，forming different types of silicon nanostructures under different temperature T ，namely，amorphous clusters，chain structures and defective chain structures in the intervals 300K≤ T T ≤2800K and 2800K T T ≥3900K，carbon atoms on the edges of graphene ribbons are gradually replaced by Si atoms.For the graphene ribbons with armchair edges，existence of multiple adsorption sites does not allow growth of chain-like Si nanostructures.