Metallic Reaction for Joining of SiC Ceramics

The reactivity and the reaction product morphology between SiC and a number of metals has been studied by annealing samples of SiC sputtered with metallic films or reaction couples of SiC and metallic foils for various times in Ar/4vol. % H2 at temperatures between 500 and 1600°C Optimum conditions for the joining process, as determined by 4-point bend test at room temperature were found to be 1450°C with an intermediate 1p.m thin titanium layer.