Photopumped green lasing on BeZnSeTe double heterostructures grown on InP substrates

Double heterostructures (DHs) consisting of BeZnSeTe active and MgSe/BeZnTe superlattice cladding layers were fabricated on InP substrates by molecular beam epitaxy. By photoexciting the DHs, green lasing emissions at 548 nm were obtained at room temperature. The threshold excitation power density was 70 kW/cm2, from which we estimated the threshold carrier density and threshold current density assuming a green laser diode (LD) with a BeZnSeTe active layer to be (1.4–4.6)×1018 cm−3 and 0.22–0.73 kA/cm2, respectively. The experiment proved the applicability of BeZnSeTe as an active layer of green LDs.