Method for determining service life of AlGaN/GaN based heterojunction channel current carrier

The invention discloses a method for determining the service life of an AlGaN/GaN based heterojunction channel current carrier, belonging to the technical field of current carrier relaxation mechanism in the GaN based heterostructure channel quantum well. In the method, the luminescence decay time of the AlGaN/GaN based heterojunction channel current carrier is determined according to the 'current carrier peak concentration-time' smooth line scatter diagram, and then, under the condition of supposing that the electron and the hole have the same service life, the service life of the AlGaN/GaN based heterojunction channel current carrier is determined according to the luminescence decay time. The method can deeply recognize the physical mechanism of devices and evaluate the reliability of the devices.