SILICON CARBIDE BARRIER LAYER ON CERAMIC SUBSTRATES FOR CONNECTION CRYSTALLINE SILICON THIN-FILM MODULES WITH AN INTEGRATED SERIES

We report on the deposition of Sic-layers in a newly constructed high-temperature chemical vapor deposition system. With this system Sic-layers are deposited onto tapecasted Sic-ceramic substrates (10x10 cm2) at deposition temperatures ranging from 1200 to 145OOC to study the chemical stability, the smoothness, and the electrical resistivity of the Sic-layers. The Sic-layers have a resistivity of 1.6~10~ Rcm when boron doping is used to compensate unintended doping. This layer resistivity is sufficiently high to fabricate an integrated series connection on a conductive ceramic substrate.